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| NTD6415ANL N- Channel Power MOSFET 100 V, 23 A, 56 m, Logic Level Features www..com http://onsemi.com Low RDS(on) 100% Avalanche Tested AEC-Q101 Qualified These Devices are Pb-Free, Halogen Free/BFR Free and are RoHS Compliant V(BR)DSS 100 V RDS(on) MAX 56 m @ 4.5 V 52 m @ 10 V D ID MAX 23 A MAXIMUM RATINGS (TJ = 25C unless otherwise noted) Parameter Drain--to--Source Voltage Gate--to--Source Voltage -- Continuous Continuous Drain Current Power Dissipation Pulsed Drain Current Steady State Steady State TC = 25C TC = 100C TC = 25C PD IDM TJ, Tstg IS EAS Symbol VDSS VGS ID Value 100 20 23 16 83 80 --55 to +175 23 79 W A C A mJ Unit V V A G S tp = 10 ms Operating and Storage Temperature Range Source Current (Body Diode) Single Pulse Drain--to--Source Avalanche Energy (VDD = 50 Vdc, VGS = 10 Vdc, IL(pk) = 23 A, L = 0.3 mH, RG = 25 ) Lead Temperature for Soldering Purposes, 1/8 from Case for 10 Seconds 4 12 3 DPAK CASE 369AA STYLE 2 TL 260 C THERMAL RESISTANCE RATINGS Parameter Junction--to--Case (Drain) -- Steady State Junction--to--Ambient -- Steady State (Note 1) Symbol RJC RJA Max 1.8 39 Unit C/W MARKING DIAGRAM & PIN ASSIGNMENT 4 Drain YWW 6415AN LG 1 Gate 2 Drain 3 Source 6415ANL Y WW G = Device Code = Year = Work Week = Pb--Free Package Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability. 1. Surface mounted on FR4 board using 1 sq in pad size, (Cu Area 1.127 sq in [2 oz] including traces). ORDERING INFORMATION See detailed ordering and shipping information in the package dimensions section on page 2 of this data sheet. Semiconductor Components Industries, LLC, 2010 March, 2010 - Rev. 0 - 1 Publication Order Number: NTD6415ANL/D NTD6415ANL ELECTRICAL CHARACTERISTICS (TJ = 25C unless otherwise noted) Parameter OFF CHARACTERISTICS Drain--to--Source Breakdown Voltage Drain--to--Source Breakdown Voltage Temperature Coefficient Zero Gate Voltage Drain Current Gate--to--Source Leakage Current ON CHARACTERISTICS (Note 2) Gate Threshold Voltage Negative Threshold Temperature Coefficient Drain--to--Source On--Resistance Forward Transconductance Input Capacitance Output Capacitance Reverse Transfer Capacitance Total Gate Charge Threshold Gate Charge Gate--to--Source Charge Gate--to--Drain Charge Total Gate Charge Turn--On Delay Time Rise Time Turn--Off Delay Time Fall Time Forward Diode Voltage Reverse Recovery Time Charge Time Discharge Time Reverse Recovery Charge VGS(TH) VGS(TH)/TJ RDS(on) gFS CISS COSS CRSS QG(TOT) QG(TH) QGS QGD QG(TOT) td(on) tr td(off) tf VSD tRR Ta Tb QRR VGS = 0 V, dIS/dt = 100 A/ms, IS = 23 A TJ = 25C TJ = 125C VGS = 4.5 V, VDD = 80 V, ID = 23 A, RG = 6.1 VGS = 10 V, VDS = 80 V, ID = 23 A VGS = 4.5 V, VDS = 80 V, ID = 23 A VGS = 0 V, f = 1.0 MHz, VDS = 25 V VGS = 4.5 V, ID = 10 A VGS = 10 V, ID = 10 A VDS = 5.0 V, ID = 10 A CHARGES, CAPACITANCES AND GATE RESISTANCE 1024 156 70 20 1.1 3.1 14 35 11 91 40 71 0.87 0.74 64 40 24 152 nC ns 1.2 V nC ns nC pF VGS = VDS, ID = 250 mA 1.0 4.8 44 43 24 56 52 S 2.0 V mV/C m V(BR)DSS V(BR)DSS/TJ IDSS IGSS VGS = 0 V, VDS = 100 V TJ = 25C TJ = 125C VGS = 0 V, ID = 250 mA VGS = 0 V, ID = 250 mA, TJ = --40C 100 92 115 1.0 V mV/C Symbol Test Condition Min Typ Max Unit www..com mA 100 100 nA VDS = 0 V, VGS = 20 V SWITCHING CHARACTERISTICS (Note 3) DRAIN-SOURCE DIODE CHARACTERISTICS VGS = 0 V, IS = 23 A 2. Pulse Test: Pulse Width 300 ms, Duty Cycle 2%. 3. Switching characteristics are independent of operating junction temperatures. ORDERING INFORMATION Device NTD6415ANLT4G Package DPAK (Pb--Free) Shipping 2500 / Tape & Reel For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specification Brochure, BRD8011/D. http://onsemi.com 2 NTD6415ANL 45 40 ID, DRAIN CURRENT (A) 35 30 25 20 15 10 5 0 0 1 2 3 4 VDS, DRAIN--TO--SOURCE VOLTAGE (V) 5 VGS = 10 V 5V 4V TJ = 25C ID, DRAIN CURRENT (A) 3.6 V 3.4 V 3.2 V 3.0 V 2.8 V 45 40 35 30 25 20 15 10 5 0 1 TJ = 125C TJ = --55C 2 3 VGS, GATE--TO--SOURCE VOLTAGE (V) 4 VDS 10 V www..com TJ = 25C Figure 1. On-Region Characteristics RDS(on), DRAIN--TO--SOURCE RESISTANCE () 0.050 0.048 0.046 0.044 0.042 0.040 RDS(on), DRAIN--TO--SOURCE RESISTANCE () 0.050 0.048 0.046 0.044 0.042 0.040 5 Figure 2. Transfer Characteristics ID = 23 A TJ = 25C TJ = 25C VGS = 4.5 V VGS = 10 V 2 3 4 5 6 7 8 9 10 10 15 ID, DRAIN CURRENT (A) 20 25 Figure 3. On-Region versus Gate Voltage RDS(on), DRAIN--TO--SOURCE RESISTANCE (NORMALIZED) 3.0 2.5 2.0 1.5 1.0 0.5 --50 ID = 23 A VGS = 4.5 V IDSS, LEAKAGE (nA) 10000 VGS, GATE--TO--SOURCE VOLTAGE (V) Figure 4. On-Resistance versus Drain Current and Gate Voltage VGS = 0 V TJ = 150C 1000 TJ = 125C --25 0 25 50 75 100 125 150 175 100 10 20 30 40 50 60 70 80 90 100 TJ, JUNCTION TEMPERATURE (C) VDS, DRAIN--TO--SOURCE VOLTAGE (V) Figure 5. On-Resistance Variation with Temperature Figure 6. Drain- -Source Leakage Current -toversus Voltage http://onsemi.com 3 NTD6415ANL VGS, GATE--TO--SOURCE VOLTAGE (V) 2500 2000 1500 1000 500 0 Ciss TJ = 25C VGS = 0 V 10 8 6 4 2 0 Qds QT C, CAPACITANCE (pF) Qgs www..com VDS = 80 V ID = 23 A TJ = 25C Crss Coss 30 40 50 60 70 80 90 0 10 20 100 0 5 10 15 20 25 30 35 VDS, DRAIN--TO--SOURCE VOLTAGE (V) Qg, TOTAL GATE CHARGE (nC) Figure 7. Capacitance Variation 1000 IS, SOURCE CURRENT (A) VDS = 80 V ID = 23 A VGS = 4.5 V t, TIME (ns) 100 tf 10 tr 25 20 15 10 5 Figure 8. Gate- -Source Voltage and -toDrain- -Source Voltage versus Total Charge -toTJ = 25C VGS = 0 V td(off) td(on) 1 1 10 RG, GATE RESISTANCE () 100 0 0.50 0.55 0.60 0.65 0.70 0.75 0.80 0.85 0.90 0.95 VSD, SOURCE--TO--DRAIN VOLTAGE (V) 125 100 Figure 9. Resistive Switching Time Variation versus Gate Resistance Figure 10. Diode Forward Voltage versus Current ID = 23 A AVALANCHE ENERGY (mJ) 1000 ID, DRAIN CURRENT (A) 10 ms 10 VGS = 10 V SINGLE PULSE TC = 25C RDS(on) LIMIT THERMAL LIMIT PACKAGE LIMIT 1 10 100 VDS, DRAIN--TO--SOURCE VOLTAGE (V) 100 ms 1 ms 10 ms dc 100 75 50 25 0 25 1 0.1 Figure 11. Maximum Rated Forward Biased Safe Operating Area Figure 12. Maximum Avalanche Energy versus Starting Junction Temperature 50 75 100 125 150 TJ, STARTING JUNCTION TEMPERATURE 175 http://onsemi.com 4 NTD6415ANL RJC(t) (C/W) EFFECTIVE TRANSIENT THERMAL RESISTANCE 10 1 Duty Cycle = 0.5 0.2 0.1 0.05 0.1 0.02 0.01 0.01 SINGLE PULSE www..com 0.001 0.000001 0.00001 0.0001 0.001 0.01 t, PULSE TIME (s) 0.1 1 10 Figure 13. Thermal Response http://onsemi.com 5 NTD6415ANL PACKAGE DIMENSIONS DPAK (SINGLE GUAGE) CASE 369AA--01 ISSUE A SEATING PLANE NOTES: 1. DIMENSIONING AND TOLERANCING www..com PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. INCHES MIN MAX 0.235 0.245 0.250 0.265 0.086 0.094 0.025 0.035 0.018 0.024 0.030 0.045 0.386 0.410 0.018 0.023 0.090 BSC 0.180 0.215 0.024 0.040 0.020 -----0.035 0.050 0.155 -----MILLIMETERS MIN MAX 5.97 6.22 6.35 6.73 2.19 2.38 0.63 0.89 0.46 0.61 0.77 1.14 9.80 10.40 0.46 0.58 2.29 BSC 4.57 5.45 0.60 1.01 0.51 -----0.89 1.27 3.93 ------ --TB V R 4 C E S A 1 2 3 Z H U F L D 2 PL J DIM A B C D E F H J L R S U V Z 0.13 (0.005) M T STYLE 2: PIN 1. GATE 2. DRAIN 3. SOURCE 4. DRAIN SOLDERING FOOTPRINT* 6.20 0.244 3.0 0.118 2.58 0.101 5.80 0.228 1.6 0.063 6.172 0.243 SCALE 3:1 mm inches *For additional information on our Pb--Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. "Typical" parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including "Typicals" must be validated for each customer application by customer's technical experts. SCILLC does not convey any license under its patent rights nor the rights of others. SCILLC products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the SCILLC product could create a situation where personal injury or death may occur. Should Buyer purchase or use SCILLC products for any such unintended or unauthorized application, Buyer shall indemnify and hold SCILLC and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that SCILLC was negligent regarding the design or manufacture of the part. SCILLC is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner. PUBLICATION ORDERING INFORMATION LITERATURE FULFILLMENT: Literature Distribution Center for ON Semiconductor P.O. Box 5163, Denver, Colorado 80217 USA Phone: 303--675--2175 or 800--344--3860 Toll Free USA/Canada Fax: 303--675--2176 or 800--344--3867 Toll Free USA/Canada Email: orderlit@onsemi.com N. American Technical Support: 800--282--9855 Toll Free USA/Canada Europe, Middle East and Africa Technical Support: Phone: 421 33 790 2910 Japan Customer Focus Center Phone: 81--3--5773--3850 ON Semiconductor Website: www.onsemi.com Order Literature: http://www.onsemi.com/orderlit For additional information, please contact your local Sales Representative http://onsemi.com 6 NTD6415ANL/D |
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